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Life-time Features / Specification Substrates
HF-100DC
  • Life-time measurement system for silicon ingots
  • By direct current anodizing (JIS)
  • Measurement samples:
    Silicon bulk, PrismS (JIS), Ingot condition
  • Meas. range:
    approx. 50 uS to 20 mS
  • Data processing by oscilloscope and PC (dedicated software)
  • Non-contact photoconduction vibration decay method is available: HF-90R (Contact us for further information)

Silicon Ingots
Silicon bulk
PrismS (JIS)

Thick sorter (Full-auto) Features / Specification Substrates
NC-80T
  • High speed thickness measurement and sorting for silicon wafers
  • 1 point / 5 point thickness measurement available
  • 1 piece: approx. 9 seconds at 5 points cross measurement
  • The number of Loader cassette / Unloader cassette: Designed by specification
  • Measurement range: + - 0.5 um (by electric capacitance method)
  • Resolution: 0.1 um (by electric capacitance method)

Silicon wafers
- Lapped
- Etched
- Polished
- Mirror

Resistivity + Thickness
(Manual)
Features / Specification Substrates
RC1S / TH
  • Simple measurement unit for resistivity checking and thickness measurement
  • Resistivity: Eddy current (Non-contact) method
  • Thickness: Gauge method
  • Well suited for silicon wafers of solar cells and / or reclaimed wafers
  • Resistivity sorting (For example): 0.5 to 1 to 10 Ohm-cm (Other sorting range is available)
  • Easy operation by putting samples on the measurement stage
  • Built in PN type checker (Resistivity + PN) is available (RC-2PN)

Silicon wafers
- Lapped
- Etched
- Polished
- Mirror
- Bulk

 


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